SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

申请(专利)号： US201916273572

专利号： US2020006342A1 主分类号： H01L27/092

申请日： 2019-02-12 公开公告日： 2020-01-02

分类号： H01L27/092;

H01L29/78; H01L29/06; H01L21/8238 发明设计人： GUYOUNG CHO;

SUBIN SHIN;

DONGHYUN ROH; BYUNG-SUK JUNG; SANGJIN HYUN 申请国代码： US

优先权： 20180629 KR 10-2018-0076069

摘 要 附 图：

申请权利人： SAMSUNG

ELECTRONICS CO., LTD.

公开国代码： US 优先权国家： KR

摘 要：

Disclosed is a semiconductor device comprising a substrate, a plurality of active patterns that protrude from the substrate, a device isolation layer between the active patterns, and a passivation layer that covers a top

surface of the device isolation layer and exposes upper portions of the active patterns. The device isolation layer

includes a plurality of first isolation parts adjacent to facing sidewalls of the active patterns, and a second isolation part between the first isolation parts. A top surface of the second isolation part is located at a lower level than that of top surfaces of the first isolation parts. 主权项：

1. A semiconductor device, comprising:

a substrate;

权 利 要 求 说 明 书

【SEMICONDUCTOR DEVICE】的权利说明书内容是......请下载后查看