An investigation of ionizing radiation damage in
different SiGe processes
Pei Li;Mo-Han Liu;Chao-Hui He;Hong-Xia Guo;Jin-Xin Zhang;Ting Ma
【期刊名称】《中国物理：英文版》 【年(卷),期】2017(026)008
【摘要】Different SiGe processes and device designs are the critical influences of ionizing radiation damage.Based on the different ionizing radiation damage in SiGe HBTs fabricated by Huajie and an IBM SiGe process,quantitatively numerical simulation of ionizing radiation damage was carried out to explicate the distribution of radiation-induced charges buildup in KT9041 and IBM SiGe HBTs.The sensitive areas of the EB-spacer and isolation oxide of KT9041 are much larger than those of the IBM SiGe HBT,and the distribution of charge buildup in KT9041 is several orders of magnitude greater than that of the IBM SiGe HBT.The result suggests that the simulations are consistent with the experiment,and indicates that the geometry of the EB-spacer,the area of the Si/SiO2 interface and the isolation structure could be contributing to the different ionizing radiation damage. 【总页数】6页(551-556) 【关键词】
【作者】Pei Li;Mo-Han Liu;Chao-Hui He;Hong-Xia Guo;Jin-Xin Zhang;Ting Ma
【作者单位】School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China;Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China;Northwest Institution of Nuclear Technology, Xi'an 710024, China;School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China;School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China 【正文语种】英文 【中图分类】 【文献来源】
https://www.zhangqiaokeyan.com/academic-journal-cn_chinese-physics-b_thesis/0201251213376.html 【相关文献】
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An investigation of ionizing radiation damage in different SiGe processes
