Photo sensor module
申请(专利)号： US201615263915
专利号： US9893099B2 主分类号： H01L27/144
申请日： 2016-09-13 公开公告日： 2018-02-13
分类号： H01L27/144;
H01L31/02; H01L31/0216; H01L31/0368; H01L31/0392; H01L31/103 发明设计人： SEONG MIN CHOE;
FRANCOIS HEBERT 申请国代码： US
优先权： 20140819 KR 10-2014-0107936
摘 要 附 图：
申请权利人： MAGNACHIP
SEMICONDUCTOR, LTD. 公开国代码： US 优先权国家： KR
摘 要：
The present disclosure relates to a photo sensor module. The thickness and size of an IC chip may be reduced by
manufacturing a photo sensor based on a semiconductor substrate and improving the structure to place a UV sensor on the upper section of an active device or a passive device. The photo sensor module includes a semiconductor substrate, a field oxide layer, formed on the
semiconductor substrate, and a photo sensor comprising a photo diode formed on the field oxide layer. 主权项：
1. A photo sensor module, comprising:
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Photo sensor module
