X射线驻波方法研究半导体超薄异质外延层
姜晓明;贾全杰;胡天斗;黄宇营;郑文莉;何伟;冼鼎昌;施斌;蒋最敏;王迅
【期刊名称】《高能物理与核物理》 【年(卷),期】2001(025)006
【摘要】The X-ray standing wave experiment method is established with the double-crystal monochromator and precision 2-circle goniometer at Beijing Synchrotron Radiation Facility. It is used combined with the X-ray diffraction, to investigate the heterostructure of super thin Ge atomic layer within Si crystals. The results show that the GexSi1-x alloy layer with average x=0.13 was formed in the Si crystal sample due to the segregation of Ge atoms during the preparation. Due to the diffusion of Ge atoms to the crystal surface, the GexSi1-x alloy layer was disappeared and nearly pure Ge layer was formed on the Si crystal surface after annealing at 650℃.%利用双晶单色器和精密二圆衍射仪，在北京同步辐射装置建立了同步辐射X射线驻波实验技术，并用这一实验技术结合X射线衍射方法，研究了Si晶体中外延生长的超薄Ge原子层的微结构. 实验结果表明，由于Ge原子的偏析，在Si晶体样品中形成了共格生长的GexSi1-x合金层，浓度平均值为x≈0.13；650℃退火会使Ge原子向表面扩散，Si晶体中的合金层消失，在晶体表面形成接近纯Ge的单原子层.
【总页数】7页(588-594)
【关键词】X射线驻波异质结构偏析原子占位
X射线驻波方法研究半导体超薄异质外延层
