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Uniform Descriptions of Electron-IO Phonon Interaction in Structures of Multi-layer Coupli

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Uniform Descriptions of Electron-IO Phonon Interaction in Structures of Multi-layer Coupling

Low-dimensional Systems

ZHANG Li;SHI Jun-Jie

【期刊名称】《理论物理通讯(英文版)》 【年(卷),期】2005(044)007

【摘要】By using the transfer matrix method, within the framework of the dielectric continuum approximation,uniform forms for the interface optical (IO) phonon modes as well as the corresponding electron-IO phonon interaction Hamiltonians in n-layer coupling low-dimensional systems (including the coupling quantum well (CQ W), coupling quantum-well wire (CQWW), and coupling quantum dot (CQD)) have been presented. Numerical calculations on the three-layer asymmetrical AIGaAs/GaAs systems are performed, and the analogous characteristics for limited frequencies of IO phonon in the three types of systems (CQW, CQWW, and CQD) when the wave-vector and the quantum number approach zero or infinity are analyzed and specified. 【总页数】6页(177-182) 【

three-layer

asymmetrical

AlGaAs/GaAs

heterostructures;planar and curved heterostructures;transfer matrix method;electron-phonon interaction;coupling quantum systems 【作者】ZHANG Li;SHI Jun-Jie

Uniform Descriptions of Electron-IO Phonon Interaction in Structures of Multi-layer Coupli

UniformDescriptionsofElectron-IOPhononInteractioninStructuresofMulti-layerCouplingLow-dimensionalSystemsZHANGLi;SHIJun-Jie【期刊名称】《理论物理通讯(英文版)》【年(卷),期】200
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