Integrated semiconductor device
申请(专利)号： EP20060006672
专利号： EP1677122A1 主分类号： G01R31/316 申请权利人： FUJI ELECTRIC
CO. LTD.
申请日： 2002-10-30 公开公告日： 2006-07-05
分类号： G01R31/316 发明设计人： YOSHIDA,
KAZUHIKO; FUJIHIRA, TATSUHIKO 申请国代码： EP
优先权： 19940217 JP
2005994; 19940527 JP 11324994
摘 要 附 图：
公开国代码： EP 优先权国家： JP
摘 要：
An integrated semiconductor device comprising a control circuit (2) and a
MOS semiconductor element (1) having a gate electrode (16), and integrated with the control circuit (2) on a semiconductor substrate, comprising a gate terminal (G) for testing connected with the gate
electrode (16), characterised by including a resistor (44) inserted between the control circuit (2) and a connecting point of the gate terminal (G) for testing and the gate electrode (16), and in which the
resistor (44) is short-circuited by trimming. 主权项：
An integrated semiconductor device comprising a control circuit (2) and a MOS semiconductor element
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Integrated semiconductor device
