Asymmetrically stressed CMOS FinFET
申请(专利)号： US20050162660
专利号： US7400031B2 主分类号： H01L23/58 申请权利人： BRENT A.
ANDERSON; EDWARD J. NOWAK 公开国代码： US 优先权国家： US
摘 要：
A CMOS device comprising a FinFET comprises at least one fin structure comprising a source region; a drain
region; and a channel region comprising silicon separating the source region from the drain region. The FinFET further
comprises a gate region comprising a N+ polysilicon layer on one side of the
channel region and a P+ polysilicon layer on an opposite side of the channel region, thereby, partitioning the fin structure into a first side and a second side,
respectively. The channel region is in
mechanical tension on the first side and in mechanical compression on the second side. The FinFET may comprise any of a nFET and a pFET, wherein the nFET
comprises a N-channel inversion region in the first side, and wherein the pFET
comprises a P-channel inversion region in the second side. The CMOS device may further comprise a tensile film and a relaxed film on opposite sides of the fin structure adjacent to the source and drain regions, and an oxide cap layer over the
申请日： 2005-09-19 公开公告日： 2008-07-15
分类号： H01L23/58
发明设计人： BRENT A.
ANDERSON;
EDWARD J. NOWAK 申请国代码： US
优先权： 20050919 US
16266005
摘 要 附 图：
fin structure. 主权项：
1. A semiconductor structure comprising:
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Asymmetrically stressed CMOS FinFET
