MOSFET AND MANUFACTURE THEREOF
申请(专利)号： JP19970138841
专利号： JPH10335651A 主分类号： H01L29/78 申请权利人： OKI ELECTRIC
IND CO LTD
申请日： 1997-05-28 公开公告日： 1998-12-18
分类号： H01L29/78;
H01L29/41 发明设计人： MATSUHASHI
HIDEAKI;
KASAI MASANORI; HISAWA KAZUYA 申请国代码： JP
优先权： 19970528 JP
13884197
摘 要 附 图：
公开国代码： JP 优先权国家： JP
摘 要：
PROBLEM TO BE SOLVED: To provide a MOSFET which functions as a device of short gate length and is less affected by the resistance of a gate electrode which causes a signal transmission
delay. ;SOLUTION: A polysilicon 17 is deposited on the side of a structure covered with a PSG film 16 and a first PSG side wall 18, and furthermore a structure where a second BSG side wall 19 is provided is formed (F), and an
empty space whose width is specified by the second side wall 19 is formed above the polysilicon 17 by etching (G). Then, a silicon 21 is deposited in the empty space to form a structure (H), and then the silicon 21 is turned to silicide, whereby a gate electrode with a silicide 23 whose width is larger than a width (gate length) on a substrate 11 side is formed (J).;COPYRIGHT: (C)1998,JPO 主权项：
【請求項1】 シリサイド層をその表層に有するゲート電極を備えたMOSFETにおい
て、
前記ゲート電極の、ソース?ドレイン方向の断面の形状が、シリサイド層側のチャネル方向の長さの方が、半導体基板側のチ
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MOSFET AND MANUFACTURE THEREOF
