SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
申请(专利)号： JP19910238535
专利号： JPH0582731A 主分类号： H01L27/04
申请日： 1991-09-19 公开公告日： 1993-04-02
分类号： H01L27/04;
H01B3/12; H01L29/46 发明设计人： KAMIYAMA
SATOSHI 申请国代码： JP
优先权： 19910919 JP
23853591
摘 要 附 图：
申请权利人： NEC CORP 公开国代码： JP 优先权国家： JP
摘 要：
PURPOSE: To provide its structure of less leakage current and its
manufacturing method in a capacitor structure having a tantalum oxide film as a capacity insulating
film. ;CONSTITUTION: After a capacity insulating film 107 consisting of a storage node electrode 106 and a tantalum oxide film is formed, a titanium nitride film, a titanium film, and an aluminum-based metallic film are deposited in that order. And a first plate electrode 108a of a laminated film of a titanium nitride film with a titanium film and a second plate electrode 108b of an aluminum-based metallic film are formed.;COPYRIGHT: (C)1993,JPO&Japio 主权项：
【請求項1】 シリコン系材料からなる下層電極,酸化タンタル膜からなる容量絶縁膜,および上層電極により構成された容量構造体を有する半導体装置において、 前記上層電極が、少なくとも前記容量絶縁膜を覆う窒
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SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
