FINFET STRUCTURE
申请(专利)号: US201615269946
专利号: US2017012131A1 主分类号: H01L29/78
申请日: 2016-09-19 公开公告日: 2017-01-12
分类号: H01L29/78;
H01L21/266; H01L29/04; H01L21/265; H01L29/06; H01L29/10 发明设计人: MENG ZHAO
申请权利人: SEMICONDUCTO
R
MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION 公开国代码: US 优先权国家: CN
申请国代码: US
优先权: 20140917 CN
201410475129.8
摘 要 附 图:
摘 要:
A FinFET device includes a substrate and a fin structure having a semiconductor material layer over the substrate and recessed regions on side walls of the fin structure. The recessed regions have openings facing away from the fin
structure. The fin structure has a bottom portion below the recessed regions that is wider than a top portion. 主权项:
1. A FinFET device, comprising:
权 利 要 求 说 明 书
【FINFET STRUCTURE】的权利说明书内容是......请下载后查看
说 明 书
【FINFET STRUCTURE】的说明书内容是......请下载后查看
FINFET STRUCTURE
![](/skin/haowen/images/icon_star.png)
![](/skin/haowen/images/icon_star.png)
![](/skin/haowen/images/icon_star.png)
![](/skin/haowen/images/icon_star.png)