Resistive memory device

Resistive memory device

申请(专利)号： US20080026701

专利号： US7545669B2 主分类号： G11C11/00 申请权利人： GLEN HUSH;

MARK INGRAM; JUN LIU;

MIKE VIOLETTE 公开国代码： US 优先权国家： US

摘 要：

A system having a memory cell. In certain embodiments, the memory cell includes a resistive memory element, an access transistor having a gate, a first terminal, and a second terminal, and a control transistor having a gate, a first terminal, and a second terminal. The first terminal of the access transistor may be coupled to the resistive memory element, and the gate of the access transistor may be coupled to the gate of the control

transistor. Additionally, the first terminal of the control transistor may be coupled to the resistive memory element. 主权项：

1. A system, comprising:

a memory cell comprising: a resistive memory element;

申请日： 2008-02-06 公开公告日： 2009-06-09

分类号： G11C11/00 发明设计人： GLEN HUSH;

MARK INGRAM; JUN LIU;

MIKE VIOLETTE 申请国代码： US

优先权： 20080206 US

2670108; 20060809 US 50159806

摘 要 附 图：

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