D44H Series (NPN),D45H Series (PNP)
Preferred Devices
Complementary SiliconPower Transistors
These series of plastic, silicon NPN and PNP power transistors canbe used as ?general purpose power amplification and switching suchas output or driver stages in applications such as switching regulators,converters and power amplifiers.
Features
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??Low Collector-Emitter Saturation Voltage
VCE(sat) = 1.0 V (Max) @ 8.0 A
??Fast Switching Speeds
??Complementary Pairs Simplifies Designs??Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
D44H8, D45H8D44H11, D45H11Emitter Base VoltageCollector Current
- Continuous- Peak (Note 1)Total Power Dissipation
@ TC = 25°C@ TA = 25°COperating and Storage Junction Temperature Range
SymbolVCEO
6080
VEBIC
1020
PD
702.0
TJ, Tstg
-55 to +150
°CW
5.0
VdcAdc
Value
UnitVdc
10 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS 60, 80 VOLTS
4MARKINGDIAGRAM
1TO-220ABCASE 221A-09
STYLE 1
23D4xHyyGAYWWD4xHyy=Device Code
x = 4 or 5yy = 8 or 11
A=Assembly LocationY=YearWW=Work WeekG=Pb-Free Package
ORDERING INFORMATION
Device
PackageTO-220TO-220
(Pb-Free)TO-220TO-220(Pb-Free)TO-220TO-220(Pb-Free)TO-220TO-220(Pb-Free)
Shipping?50 Units/Rail50 Units/Rail50 Units/Rail50 Units/Rail50 Units/Rail50 Units/Rail50 Units/Rail50 Units/Rail
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-CaseThermal Resistance, Junction-to-AmbientMaximum Lead Temperature for SolderingPurposes: 1/8″ from Case for 5 Seconds
SymbolRqJCRqJATL
Max1.862.5275
Unit°C/W°C/W°C
D44H8D44H8GD44H11D44H11GD45H8D45H8GD45H11D45H11G
Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.1.Pulse Width v 6.0 ms, Duty Cycle v 50%.
*For additional information on our Pb-Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.
?For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.
Preferred devices are recommended choices for future useand best overall value.
?? Semiconductor Components Industries, LLC, 20071
November, 2007 - Rev. 10
Publication Order Number:
D44H/D
D44H Series (NPN),
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
SymbolMinTypMaxUnit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0 Adc)
D44H8, D45H8D44H11, D45H11
VCEO(sus)ICES
6080--
----
--
VdcmAmA
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)Emitter Cutoff Current (VEB = 5.0 Vdc)
1010
IEBO
ON CHARACTERISTICS
DC Current Gain
(VCE = 1.0 Vdc, IC = 2.0 Adc)(VCE = 1.0 Vdc, IC = 4.0 Adc)
hFE
6040-VBE(sat)
-----
-
Collector-Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.4 Adc)Base-Emitter Saturation Voltage(IC = 8.0 Adc, IB = 0.8 Adc)
VCE(sat)
Vdc
--
1.01.5
Vdc
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1.0 MHz)
Ccb
D44H SeriesD45H Series
----90160
----
pF
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
fT
MHz
D44H SeriesD45H Series
5040
SWITCHING TIMES
Delay and Rise Times
(IC = 5.0 Adc, IB1 = 0.5 Adc)
td + tr
ns
D44H Series
D45H SeriesD44H SeriesD45H Series
------
300135500500140100
------
Storage Time
(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc)
ts
ns
Fall Time
(IC = 5.0 Adc, IB1 = 102 = 0.5 Adc)
tf
ns
D44H Series
D45H Series
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2
D44H Series (NPN),
1000VCE = 1 VhFE, DC CURRENT GAIN125°C-40°C100hFE, DC CURRENT GAIN25°C1000
VCE = 1 V125°C25°C100
-40°C100.010.1110IC, COLLECTOR CURRENT (AMPS)
100.010.1110IC, COLLECTOR CURRENT (AMPS)
Figure 1. D44H11 DC Current GainFigure 2. D45H11 DC Current Gain
1000VCE = 5 VhFE, DC CURRENT GAIN125°C1000
VCE = 5 VhFE, DC CURRENT GAIN25°C125°C25°C100
-40°C100-40°C100.010.1110IC, COLLECTOR CURRENT (AMPS)
10
0.010.1110IC, COLLECTOR CURRENT (AMPS)
Figure 3. D44H11 DC Current GainFigure 4. D45H11 DC Current Gain
0.40SATURATION VOLTAGE (VOLTS)0.350.300.250.200.150.100.0500.1SATURATION VOLTAGE (VOLTS)VCE(sat) @ IC/IB = 100.6
VCE(sat) @ IC/IB = 100.50.4
-40°C0.3
25°C0.20.10
1100.11IC, COLLECTOR CURRENT (AMPS)
10125°C-40°C25°C125°CIC, COLLECTOR CURRENT (AMPS)
Figure 5. D44H11 ON-VoltageFigure 6. D45H11 ON-Voltage
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3
D44H Series (NPN),
1.2SATURATION VOLTAGE (VOLTS)SATURATION VOLTAGE (VOLTS)VBE(sat) @ IC/IB = 101.00.80.625°C0.40.200.11IC, COLLECTOR CURRENT (AMPS)
10-40°C1.41.21.00.80.6
25°C0.40.200.11IC, COLLECTOR CURRENT (AMPS)
10125°CVBE(sat) @ IC/IB = 10-40°C125°CFigure 7. D44H11 ON-VoltageFigure 8. D45H11 ON-Voltage
100IC, COLLECTOR CURRENT (AMPS)503020105.03.02.01.00.50.30.20.1
1.0D44H/45H8D44H/45H10,112.03.05.07.01020305070100VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
PD, POWER DISSIPATION (WATTS)TATC
1.0 ms100 ms10 ms3.060
2.040
TC1.020
TATC ≤ 70° CdcDUTY CYCLE ≤ 50%1.0 ms00
020406080100120T, TEMPERATURE (°C)
140160Figure 9. Maximum Rated Forward Bias
Safe Operating Area
Figure 10. Power Derating
r(t), TRANSIENT THERMALRESISTANCE (NORMALIZED)1.00.70.50.30.20.10.070.050.030.020.01D = 0.50.20.10.050.020.010.010.02ZqJC(t) = r(t) RqJCRqJC = 1.56°C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk) - TC = P(pk) ZqJC(t)0.20.51.02.05.0102050P(pk)t1t2SINGLE PULSE0.050.1DUTY CYCLE, D = t1/t21002005001.0 kt, TIME (ms)
Figure 11. Thermal Response
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4
D44H Series (NPN),
PACKAGE DIMENSIONS
TO-220CASE 221A-09ISSUE AE
-T-B4SEATINGPLANE
F
TCSNOTES:
1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.DIMENSION Z DEFINES A ZONE WHERE ALLBODY AND LEAD IRREGULARITIES AREALLOWED.
DIMABCDFGHJKLNQRSTUVZ
INCHESMINMAX0.5700.6200.3800.4050.1600.1900.0250.0350.1420.1610.0950.1050.1100.1550.0140.0250.5000.5620.0450.0600.1900.2100.1000.1200.0800.1100.0450.0550.2350.2550.0000.0500.045------0.080
MILLIMETERS
MINMAX14.4815.759.6610.284.074.820.640.883.614.092.422.662.803.930.360.6412.7014.271.151.524.835.332.543.042.042.791.151.395.976.470.001.271.15------2.04
Q123AUKHZLVGDNRJON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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D44H11G D45H11G
