Photoelectric Characteristic of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p-n
Heterojunctions
作者：HUANG Yan-Hong;JIN Kui-Juan;ZHAO Kun;L(U) Hui-Bin;HE Meng;CHEN Zheng-Hao;ZHOU Yue-Liang;YANG Guo-Zhen;MA Xiu-Liang
作者机构：Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing
100080;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing
100080;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing
100080;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing
100080;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing
100080;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing
100080;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing
100080;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing
100080;Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 来源：中国物理快报：英文版
ISSN：0256-307X 年：2006 卷：023 期：004 页码：982-985 页数：4 中图分类：O4 正文语种：chi
摘要：@@ Good rectifying current-voltage characteristics and nanosecond photoelectric effects are observed in the p-n
heterojunctions of La0.gSr0.1MnO3/SrNb0.01 Ti0.99O3 fabricated by laser molecular beam epitaxy. The rise time is about 26ns and the full width at half maximum is about 125ns for the open-circuit photovoltaic pulses when the La0.gSr0.1MnOs film in the heterojunction is irradiated by a laser operated at wavelength 308nm with pulse duration of about 25 ns. A qualitative explanation is presented, based on an analysis of the photoelectric effect of p-n hetero junction.
Photoelectric Characteristic of La0.9Sr0.1MnO3@@Sr
