MCZ33290EFR2 MC33290DR2 ISO K线串行链接接口芯片 - 图文 

ISO K Line Serial Link Interface

33290是一种串行链路总线接口设备，旨在提供汽车诊断应用中的双向半双工通信接口。它旨在通过专用的ISO K线在车辆的车载微控制器和车外系统之间建立接口。 33290设计为符合诊断系统ISO9141规范。该设备的K线总线驱动器的输出得到了全面保护，以防止总线短路和过热情况。

33290通过在SMARTMOS工艺上构建，并结合了CMOS逻辑，双极/ MOS模拟电路和DMOS功率FET，可在极端温度和电压条件下发挥其坚固性。尽管33290主要是为汽车应用而设计的，但它仍适用于其他串行通信应用。它是在-40oC≤TA≤125oC的环境温度范围和8.0 V≤VBB≤18 V的电源范围内通过参数指定的。经济的SO-8表面贴装塑料封装使33290非常具有成本效益。

MC33290D/R2 MCZ33290EF/R2

33290

ISO9141 PHYSICAL INTERFACE

Features

? ? ? ? ? ? ? ? ? ? ?

可在8.0至18V的宽电源电压下工作 ?工作温度为-40至125°C

?直接与标准CMOS微处理器接口 ?ISO K线引脚可防止接地短路 ?带有迟滞的热关断

?具有高电流的ISO K线引脚

?最高10 nF的寄生电容可驱动ISO K线

?很少需要额外的组件，可实现8.0 kV ESD保护 ?待机模式：VDD为5.0 V时无VBat电流消耗 ?在VDD为5.0V的情况下工作期间的低电流消耗 ?后缀代码EF指定的无铅包装

D SUFFIX

EF SUFFIX (PB-FREE) 98ASB42564B 8-PIN SOICN

ORDERING INFORMATION

Device

Temperature Range (TA) -40 to 125°C

Package

8-SOICN

Figure 1. 33290 Simplified Application Diagram

VBB

INTERNAL BLOCK DIAGRAM

3.0 kΩ

1

50 V 20 V

200 Ω RX

6

10 V 10 V ISO

4 R

Hys

MasterBias CEN 8 VDD Thermal 125 kΩ 40 V Shutdown GND

7 TX 2.0 kΩ 3 5 10 V 125 kΩ 10 V

Figure 2. 33290 Simplified Block Diagram

PIN CONNECTIONS

Figure 3. 33290 Pin Connections

Table 1. 33290 Pin Definitions

Pin Number

Pin Name VBB 1 Definition Battery power through external resistor and diode. 2 3 NC GND ISO Not to be connected. (1) Common signal and power return. 4 Bus connection. 5 TX RX Logic level input for data to be transmitted on the bus. 6 Logic output of data received on the bus. 7 VDD CEN Logic power source input. 8 Chip enable. Logic “1” for active state. Logic “0” for sleep state. Notes 1. NC pins should not have any connections made to them. NC pins are not guaranteed to be open circuits.

ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

Table 2. Maximum Ratings

除非另有说明，否则所有电压均相对于地面。 超过这些额定值可能会导致设备故障或永久损坏。

Rating Symbol Value Unit V V V A V VDD DC Supply Voltage VBB Load Dump Peak Voltage ISO Pin Load Dump Peak Voltage ISO Short Circuit Current Limit (3)ESD Voltage (4)Human Body Model Machine Model (4)(2)VVVIDD -0.3 to 7.0 45 40 1.0 BB(LD) ISO ISO(LIM) VVE ESD1 ESD2 clamp stg ±2000 ±200 10 -55 to +150 -40 to +125 -40 to +150 mJ ?C ?C ?C W ISO Clamp Energy (5)Storage Temperature Operating Case Temperature Operating Junction Temperature Power Dissipation TA = 25?C Peak Package Reflow Temperature During Reflow Thermal Resistance Junction-to-Ambient (6)(7), TTC TJ PD 0.8 Note 7. TPPRT RθJA °C ?C/W Notes 150 2.在典型的应用中，设备将在两次电池跳跃启动条件下持续10分钟，但不能保证在此时间内保持在指定的参数范围内。 3.ESD数据可根据要求提供。

4.ESD1测试根据人体模型（CZAP = 100 pF，RZAP = 1500Ω）执行，ESD2测试根据机器模型（CZAP = 200 pF，RZAP = 0Ω）执行。

5.在25°C的非重复夹紧能力。

6.Pin焊接温度限制最长持续10秒。 不适用于浸焊。 超过这些限制可能会导致设备故障或永久损坏。

Table 3. Static Electrical Characteristics

除非另有说明，否则在4.75 V≤VDD≤5.25 V，8.0 V≤VBB≤18 V，-40°C≤TC≤125°C的条件下注明的特性。.

Characteristic Symbol Min Typ Max Unit POWER AND CONTROL I VDD Sleep State Current Tx = 0.8 VDD, CEN = 0.3 VDD VDD Quiescent Operating Current Tx = 0.2 VDD, CEN = 0.7 VDD VBB Sleep State Current VBB = 16 V, Tx = 0.8 VDD, CEN = 0.3 VDD VBB Quiescent Operating Current TX = 0.2 VDD, CEN = 0.7 VDD Chip Enable DD(SS) – – 0.1 mA II mA DD(Q) – – 1.0 μA BB(SS) – – 50 I mA BB(Q) – – 1.0 V (8)Input High-Voltage Threshold Input Low-Voltage Threshold Chip Enable Pull-Down Current RISO = 510 Ω (11) VI IH(CEN) IL(CEN) 0.7 VDD – – – (9) V– 2.0 0.3 VDD – 40 μA V 0.3 x VDD (10)PD(CEN) TX Input Low-Voltage Threshold VIL(Tx) – – TX Input High-Voltage Threshold RISO = 510 Ω (12) VIH(Tx) 0.7 x VDD – – V TX Pull-Up Current (13) RX Output Low-Voltage Threshold RISO = 510 Ω, TX = 0.2 VDD, Rx Sinking 1.0 mA RX Output High-Voltage Threshold RISO = 510 Ω, TX = 0.8 VDD, RX Sourcing 250 μA Thermal Shutdown (14)IPU(Tx) VOL(Rx) -40 – -2.0 0.2 VDD μA V – – V V OH(Rx) 0.8 VDD – 170 – – ?C TLIM 150 Notes

8. When IBB transitions to >100 μA. 9. When IBB transitions to <100 μA.

10. Enable pin has an internal current pull-down. Pull-down current is measured with CEN pin at 0.3 VDD. 11. Measured by ramping TX down from 0.7 VDD and noting TX value at which ISO falls below 0.2 VBB. 12. Measured by ramping TX up from 0.3 VDD and noting the value at which ISO rises above 0.9 VBB. 13. Tx pin has internal current pull-up. Pull-up current is measured with TX pin at 0.7 VDD.

14. Thermal Shutdown performance (TLIM) is guaranteed by design but not production tested.