Ⅱ-Ⅵ族化合物半导体量子结构材料和器件的研究与发展
郝建伟;查钢强;介万奇
【期刊名称】《材料工程》 【年(卷),期】2011(000)006
【摘要】The basic concepts of quantum structure materials and devices were summarized, and the definition of quantum structure and the quantum size effect were introduced. Take example for the Ⅱ-Ⅵ compound semiconductor, the effect of the quantum size effect upon exciton binding energy was introduced. Therefore, the Ⅱ-Ⅵ compound semiconductor quantum structure materials such as quantum wells and quantum dots, and the application development of which in photoelectric detection devices, light emitting devices and solar cell field were analyzed generally.%简要介绍了量子结构材料与器件中的基本概念,重点介绍了量子结构的定义和量子尺寸效应的能带裁剪工程.以Ⅱ-Ⅵ族化合物半导体为例,介绍了量子尺寸效应对于激子束缚能的影响.以此为基础,综述了Ⅱ-Ⅵ族化合物半导体量子阱、量子点等量子结构材料以及量子结构器件在光电探测、发光器件与太阳能电池领域的研究现状,并总结了Ⅱ-Ⅵ族化合物半导体量子结构材料与器件的发展趋势. 【总页数】5页(87-91)
【关键词】Ⅱ-Ⅵ族化合物半导体;量子结构;激子效应;量子尺寸效应 【作者】郝建伟;查钢强;介万奇
【作者单位】北京航空航天大学,北京100191;西北工业大学材料学院,西安
Ⅱ-Ⅵ族化合物半导体量子结构材料和器件的研究与发展
