SMK1820F18N20 AUK高压MOS管 - 图文 

SWITCHING REGULATOR 开关稳压器APPLICATIONS Features应用特点

? High Voltage : BVDSS=200V(Min.) ? Low Crss : Crss=55pF(Typ.)

? Low gate charge : Qg=22nC(Typ.) ? Low RDS(on) : RDS(on)=0.17Ω(Max.)

PIN Connection

D

Ordering Information订购信息

Type No. SMK1820F

Marking SMK1820

Package Code TO-220F-3L

G

G D

S

S

TO-220F-3L

Marking Diagram

Column 1 : Manufacturer

Column 2 : Production Information e.g.) GYMDD

-. G : Factory management code

-. YMDD : Date Code (year, month, date)

Column 3 : Device Code

Absolute maximum ratings (TC=25?C unless otherwise noted)绝对最大额定值

Characteristic Symbol Rating VDSS Drain-source voltage 200 Gate-source voltage VGSS ?30 TC=25℃ 18 Unit V V Drain current (DC) * ID A A A W A TC=100℃ IDM PD IAS 9.1 72 35 18 453. Drain current (Pulsed) * Power dissipation Avalanche current (Single) ② ② ① ① Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range EAS mJ A IAR 18 13.9 EAR mJ ?C TJ Tstg 150 -55~150 * Limited by maximum junction temperature Characteristic Thermal resistance Symbol Rth(J-C) Rth(J-A) Typ. - - Max. 3.57 62.5 Unit ℃/W Junction-case Junction-ambient

Electrical Characteristics (TC=25?C unless otherwise noted)电气特性

Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Test Condition ID=250uA, VGS=0V ID=250uA, VDS=VGS VDS=200V, VGS=0V VDS=0V, VGS=?30V VGS=10V, ID=9.0A VDS=10V, ID=9.0A VGS=0V, VDS=25V f=1 MHz Min. Typ. 200 2.0 - - - - - Max. Unit - 4.0 1 ?100 0.17 - 1240 - - - - 0.14 10.5 942 227 V V uA nA Ω S pF Output capacitance Coss Crss - 310 71 Reverse transfer capacitance Turn-on delay time td(on) - 55 15 - VDD=125V, ID=18A RG=25? - - - - - Rise time Turn-off delay time Fall time Total gate charge Gate-source charge tr td(off) tf Qg Qgs - 130 135 105 22 6.6 ③④ - - ns VDS=160V, VGS=10V ID=18A - 28 nC Gate-drain charge Qgd ③④ - - 7.2 -

Source-Drain Diode Ratings and Characteristics (TC=25?C unless otherwise noted)

源漏二极管的额定值和特性

Characteristic Source current (DC) Source current (Pulsed) ① Symbol IS ISM VSD trr Qrr Test Condition Min. Typ. Max. Unit - - Integral reverse diode in the MOSFET VGS=0V, IS=18A IS=18A, VGS=0V dIF/dt=100A/us - - 18 72 1.4 - - A Forward voltage Reverse recovery time Reverse recovery charge ④ - - - - 208 1.63 V ns uC

Note ;

① Repetitive rating : Pulse width limited by maximum junction temperature

② L=2.1mH, IAS=18A, VDD=50V, RG=25?, Starting TJ=25℃ ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature

Electrical Characteristic Curves电气特性曲线

Fig. 1 ID - VDS

:

-

Fig. 3 RDS(on) - ID

Fig. 5 Capacitance - VDS

Fig. 2 ID - VGS

Fig. 4 I S - VSD

Fig. 6 V GS - QG

℃

Fig. 7 VDSS - TJ

?

C

Fig. 9 ID - T C

Fig. 8 RDS(on) - TJ

C

Fig. 10 Safe Operating Area

*

Fig. 11 Gate Charge Test Circuit & Waveform

Fig. 12 Resistive Switching Test Circuit & Waveform

Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform

Outline Dimension外形尺寸

unit: mm

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