Descriptions
? General purpose application
通用应用程序?
? Switching application?切换应用程序?
Features
低漏电流
低集电极饱和电压可实现低电压操作 与KBT2907A互补
PIN Connection
Ordering Information订购信息
Type NO.
Marking
Package Code
SOT-23
Dalian
KBT2222A
1P □
① ②
①Device Code ② Year& Week Code
Absolute maximum ratings 绝对最大额定值 Characteristic Symbol Ratings Ta=25 C Unit V Collector-Base voltage VCBO 75 Collector-Emitter voltage VCEO 40 V V Emitter-Base voltage VEBO 5 Collector current Collector dissipation IC * 0.6 A(DC) A(Pulse) ICP PC Tj 1.2 ** 350 mW ℃ Junction temperature 150 Storage temperature range Tstg -50~150 ℃ : Single pulse, tp= 300 ?
** : Package mounted on 99.5% alumina 10 8 0.6mm
** 357 Ratings Unit C/W
Thermal Characteristics热特性
Thermal resistance Junction-Ambient Characteristic Symbol Rth(J-A) ** Rth(J-C) Thermal resistance Junction-Case 200 C/W ** : Package mounted on 99.5% alumina 10 8 0.6mm
Electrical Characteristics
Characteristic 电气特性 Symbol Test Condition Min. Ta=25 C
Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=10 A, IE=0 75 - - V V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 40 - - - Emitter-Base breakdown voltage BVEBO IE=10 A, IC=0 5 - - V nA Collector cut-off current ICBO VCB=75V, IE=0 - - 20 50 Collector cut-off current ICEX VCE=30V, VEB=0.5V VCE=10V, IC=10mA - - nA DC current gain hFE VCE(sat) 100 - - - V Collector-Emitter saturation voltage Transition frequency Collector output capacitance fT Cob IC=150mA, IB=15mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1MHz VCC=30Vdc,VBE(off)=0.5Vdc, IC=150mAdc, IB1=15mAdc - 0.4 - 250 - - MHz pF - - 8 10 Delay time td tr - - ns ns Rise time - - 25 225 Storage time ts Tf Fall Time VCC=30Vdc, IC=150mAdc, IB1=IB2=15mAdc - - ns ns - 60
Electrical Characteristic Curves电气特性曲线
Outline Dimension (Unit: mm)
Descriptions
Features
通用应用 切换应用程序
PIN Connection
Package Code
①漏电流小
①低集电极饱和电压,可实现低压运行 ①与SBT2907A的互补对
1
2
Ordering Information
Type NO.
Marking
SOT-23
SBT2222A
1P □ ① ②
SOT-23
①Device Code ②Year & Week Code
Absolute maximum ratings 绝对最大额定值 Characteristic Symbol Ratings Ta=25?C Unit V Collector-Base voltage VCBO 75 40 Collector-Emitter voltage VCEO VEBO V V Emitter-Base voltage 5 0.6 Collector current IC A(DC) A(Pulse) mW ?C Collector dissipation Junction temperature ICP* PC** Tj 1.2 350 150 -55~150 Storage temperature range Tstg ?C * : Single pulse, tp= 300 ?
** : Package mounted on 99.5% alumina 10?8?0.6mm
Thermal Characteristics热特性
Characteristic Symbol Ratings Unit ?C/W Thermal resistance Junction-Ambient Rth(J-A)** 357 200 Thermal resistance Junction-Case Rth(J-C)** ?C/W ** : Package mounted on 99.5% alumina 10?8?0.6mm