SEMICONDUCTOR LASER ELEMENT
申请(专利)号： JP19910239824
专利号： JPH0582886A 主分类号： H01S3/18
申请权利人： SANYO ELECTRIC
CO LTD 公开国代码： JP 优先权国家： JP
申请日： 1991-09-19 公开公告日： 1993-04-02
分类号： H01S3/18 发明设计人： YAGI KATSUMI 申请国代码： JP
优先权： 19910919 JP
23982491
摘 要 附 图：
摘 要：
PURPOSE: To provide a distributed feedback semiconductor laser element having the current of a small lasing threshold value which lases in a single vertical mode. ;CONSTITUTION: A semiconductor laser element has a
double hetero structure wherein an active layer which generates guided emission rays is placed between an n-type clad layer 3 and first and second p-type clad layers 5 and 8. A high resistive layer 6 of a rattan blind type having a cycle
corresponding to the diffraction grating is formed between the first and second p-type clad layers 5 and 8.;COPYRIGHT: (C)1993,JPO&Japio 主权项：
【請求項1】 誘導放出光を発生させる活性層の近傍に、回折格子に対応する周期をもつ簾状の光吸収を行わない高抵抗層を設けることを特徴とする分布帰還型半導体レーザ素子。/n
权 利 要 求 说 明 书
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说 明 书
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SEMICONDUCTOR LASER ELEMENT
