Observation of a diverse deviation from macropore-formation theory in silicon electrochemistry

Observation of a diverse deviation from macropore-formation theory in silicon

electrochemistry

Bao Xiao-Qing;Ge Dao-Han;Jiao Ji-Wei

【期刊名称】《中国物理：英文版》 【年(卷),期】2008(017)008

【摘要】Via anodizing patterned and unpatterned samples with a high HF concentration ([HF]), the degree of deviation from pore-formation theory was found to be markedly different. Based on the analysis of scanning electron microscope (SEM) micrographs and current-voltage (Ⅰ - Ⅴ) curves, the variation of physical and chemical parameters of patterned and unpatterned substrates was found to be crucial to the understanding of the observations. Our results indicate that the initial surface morphology of samples can have a considerable influence upon pore formation. The electric-field effect as well as current-burst-model was employed to interpret the underlying mechanism. 【总页数】8页(3130-3137)

【关键词】space charge region, point nuclei, unpatterned specimen, Ⅰ - Ⅴ curve

【作者】Bao Xiao-Qing;Ge Dao-Han;Jiao Ji-Wei

【作者单位】State Key Laboratories of Transducer Technology, National Key Laboratories of Microsystem Technology, Shanghai Institute of

Microsystem and Information, Chinese Academy of Sciences, Shanghai 200050, China;Graduate School of Chinese Academy of Sciences, Beijing 100039, China;State Key Laboratories of Transducer Technology, National Key Laboratories of Microsystem Technology, Shanghai Institute of Microsystem and Information, Chinese Academy of Sciences, Shanghai 200050, China;Graduate School of Chinese Academy of Sciences, Beijing 100039, China;State Key Laboratories of Transducer Technology, National Key Laboratories of Microsystem Technology, Shanghai Institute of Microsystem and Information, Chinese Academy of Sciences, Shanghai 200050, China 【正文语种】中文 【中图分类】O4 【相关文献】 1.Modeling

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