MONOLITHIC SEMICONDUCTOR DEVICE
申请(专利)号： JP19830143366
专利号： JPS6034052A 主分类号： H01L27/04
申请权利人： NIPPON DENKI KK 公开国代码： JP 优先权国家： JP
摘 要：
PURPOSE:To obtain a monolithic semiconductor device, which can vary resistance values selectively or delay and adjust signals, by mounting a plurality of photogrammable resistors or capacitances.
CONSTITUTION:Intermediate terminals are lead out of a built-in resistor 8
connected to a source for a FET 2 as a monolithic semiconductor device, and either of switches 9-12 is selected by a photo-mask on a manufacture to obtain a desired resistance value. Or switches 18-20 and capacitances 15-17 are each connected in series and connected in parallel between a signal line between logic gates 13, 14 and ground potential. A desired circuit is formed by using the capacitances singly or in parallel by previously changing capacitance values separately or selecting some of the switches by the photo-mask on the
申请日： 1983-08-05 公开公告日： 1985-02-21
分类号： H01L27/04;
H01L21/822; H01L21/8222; H01L27/06; H01L27/10; H03K5/00; H03K5/13 发明设计人： WAKAO IKUTAROU 申请国代码： JP
优先权： 19830805 JP
14336683
摘 要 附 图：
manufacture, and the desired quantity of signal delay is acquired in the signal line between the gates. According to such constitution, alignment properties
between the monolithic semiconductor device and a peripheral circuit can be held, separate parts are unnecessitated, the variance of an element can be
corrected on the manufacture and yield can also be improved. 主权项：
权 利 要 求 说 明 书
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MONOLITHIC SEMICONDUCTOR DEVICE
