串阻模型及栅线优化方向Modelling of series resistance and grid pattern outlook以背面栅线数量为例，比较模拟和实测情况
A comparison between simulated values and real experiment data was made in terms of varying rear finger number from 100 to 190
正面Isc（A）
实测
7.80 A
背面Isc（A）
模拟
3.0 mOhm
2.7 mOhm
2.3 mOhm
9.90 A9.91 A
7.51 A
9.88 A
背面效率（%）
21.68%
16.79%
16.23%
6.68 A
正面效率（%）21.48%
21.58%
14.44%
串联电阻Rs（mOhm）2.9mOhm
2.8 mOhm
2.3 mOhm
**其他参数详见附录
Other input parameters is shown in appendix
串阻模型及栅线优化方向Modelling of series resistance and grid pattern outlook(1) 背面栅线数量越多，宽度越宽，则双面电池正面效率越高，背面效率越低。
The front side efficiency improves with more fingers and wider finger while the rear side has the opposite tendency.
(2) 细栅的宽度的降低受限于设备精度。
The availability of rear finger width deduction is subject to alignment precision.
(3) 整体上来说降低细栅宽度，增加细栅数量有利于提升双面电池整体电性能表现（综合正、背面）Increasing finger number while decrease width is favorable for
overall characteristics of bifacial cell.
双面电池栅线设计的重点在于背面细栅的数量和宽度
The number and width of rear fingers are the main focus of bifacial cell grid designing
正面效率
背面效率
正面效率+ 10% X 背面效率
Front efficiency
Rear efficiency
**其他参数详见附录
Other input parameters is shown in appendix
串阻模型及栅线优化方向Modelling of series resistance and grid pattern outlookMBB技术也将融入双面电池。
MBB technology is to be integrated into bifacial solar cells
正面效率
Front efficiency
背面效率
Rear efficiency
正面效率+ 10% X 背面效率
(1) 多主栅技术对正、背面效率都有提升。
Both front and rear efficiencies are expected to increase with the introduction of MBB technology.
**Kw指主栅与细栅宽度的比值
**Kw is the ratio of busbar width and finger width
**其他参数详见附录
Other input parameters is shown in appendix
串阻模型及栅线优化方向Modelling of series resistance and grid pattern outlook硅与金属的接触电阻计算有待完善。
The contact resistance calculation remains to be perfected
[1][2]
(1) 理论模型
The mechanism and modelling
(2) 接触电阻率的测量。
Themeasurementofcontactresistivity
[3]
[1] Berger H H. Models for contacts to planar devices[J]. Solid-State Electronics, 1972, 15(2): 145-158.
[2] Zhang P, Lau Y Y, GilgenbachR M. Analysis of current crowding in thin film contacts from exact field solution[J]. Journal of Physics D: Applied Physics, 2015, 48(47): 475501. [3] Guo S, Gregory G, Gabor A M, et al. Detailed investigation of TLM contact resistance measurements on crystalline silicon solar cells[J]. Solar Energy, 2017, 151: 163-172.
正泰双面单晶PERC电池Bifacial mono-crystalline PERC cell of Chint Company
0179.双面太阳能电池金属化的模拟和优化-任通 - 图文
