Memory system

Memory system

申请(专利)号： US201816052238

专利号： US10529730B2 主分类号： H01L27/11556

申请权利人： TOSHIBA

MEMORY

CORPORATION

公开国代码： US 优先权国家： JP

摘 要：

According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor

memory includes blocks each containing memory cells. The controller is configured to instruct the semiconductor memory to execute a first operation and a second operation. In the first operation and the second operation, the semiconductor

memory selects at least one of the blocks, and applies at least one voltage to all memory cells contained in said selected

申请日： 2018-08-01 公开公告日： 2020-01-07

分类号： H01L27/11556;

G11C16/08; G11C16/10; G11C7/04; G11C16/04; G11C16/16; G11C16/26; H01L27/1157; H01L27/11582 发明设计人： TAKEHIKO AMAKI;

YOSHIHISA KOJIMA;

TOSHIKATSU HIDA; MARIE GRACE IZABELLE

ANGELES SIA; RIKI SUZUKI; SHOHEI ASAMI 申请国代码： US

优先权： 20170907 JP 2017-172150

摘 要 附 图：

blocks. A number of blocks to which said voltage is applied per unit time in the

second operation is larger than that in the first operation. 主权项：

1. A memory system comprising:

a semiconductor memory including blocks each containing me

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