DMN3042L
N-CHANNEL ENHANCEMENT MODE MOSFET
AO3400A替代型号DMN3042L
Features and Benefits
V(BR)DSS 30V RDS(ON) max 26.5m? @ VGS = 10V 32m? @ VGS = 4.5V ID max 5.8A 5.0A ? ? ? ? ? ? ?
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. ? ? ? ?
Mechanical Data
? ? ?
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ? Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate)
Battery Charging
Power Management Functions DC-DC Converters Portable Power Adaptors
SOT23
? ? ?
D
D G
S Top View
Internal Schematic
G
S Top View
Ordering Information (Note 4)
Part Number DMN3042L-7 DMN3042L-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, \and Lead-free.
3. Halogen- and Antimony-free \ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
SOT23
4L
4L = Product Type Marking Code YM = Date Code Marking
Y or Yˉ = Year (ex: B = 2014) M = Month (ex: 9 = September)
Date Code Key Year Code
2009 W Jan 1 Feb 2 YM 2010 X Mar 3 Apr 4 2011 Y May 5 2012 Z Jun 6 Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O Nov N 2015 C Dec D Month Code DMN3042L
Document number: DS37539 Rev. 2- 2
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Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Steady State TA = +25°C TA = +70°C Symbol VDSS VGSS ID IS IDM Value 30 ±12 5.8 4.0 1.5 30 Units V V A A A
Thermal Characteristics
Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Steady State Steady State Symbol PD RθJA PD RθJA TJ, TSTG Value 0.72 171 1.4 93 -55 to +150 Unit W °C/W W °C/W °C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(th) Min 30 ????0.6 ????????????????????????????????????Typ ????????21 23 29 0.7 570 63 53 3.2 13.3 6.1 1.0 1.6 1.5 3.3 13.9 4.9 7.8 1.9 Max ??1 ?100 1.4 26.5 32 48 1.2 860 95 80 4.5 20 8 1.5 2.5 2.4 5 22 7 12 3 Unit V μA nA V Test Condition VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ?12V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 5.0A VGS = 2.5V, ID = 4.0A VGS = 0V, IS = 1A VDS = 15V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes:
RDS (ON) VSD Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr m? V pF ? nC VDS = 15V, ID = 6.9A nS nS nC VGS = 10V, VDD = 15V, RG = 3?, ID = 6.9A IS = 5A, dI/dt = 100A/μs IS = 5A, dI/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
DMN3042L
Document number: DS37539 Rev. 2- 2
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30 25 ID, DRAIN CURRENT (A)
VGS = 2.5V
20 VDS = 5.0V TA = 125°C °C TA = 150 C TA = 85° TA = 25° C 18
VGS = 3.0V VGS = 4.0V
ID, DRAIN CURRENT (A)
16 14 12 10 20
15 10
VGS = 4.5V
VGS = 2.0V VGS = 10.0V 8 6 4
5
VGS = 1.5V
2
0
0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics
5
0 0 TA = -55°C 2.5 0.5 1 1.5 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics
ID = 5.8A 0.028
0.026
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (?) 0.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (?) 6 8 10 12 0.16
VGS = 4.5V
4 0.024 0.12
0.022 VG S = 10V
0.08 0.02
0.04
ID = 5.0A 0.018
0
5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (?) 0.04 0.035 0 0 2 VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
1.8
RDS(ON), DRAIN-SO URCE ON-RESISTANCE (NORMALIZED) 1.6
VGS = 10V ID = 5.8A
VG S = 10 V 8 TA = 150°C 5V V GS = 4. ID = 5.0 A 0.03 0.025 0.02 0.015 TA = 125°C
TA = 85°C 1.4
VGS = 2.5V ID = 4.0A
C TA = 25°1.2
1
2 4 6 C TA = 5°-5 0.8 0.6 -50
0.01 0
20
10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (?C)
Figure 6 On-Resistance Variation with Temperature
DMN3042L
Document number: DS37539 Rev. 2- 2
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RDS(ON), DRAIN-SOURCE ON-RESISTANCE (?) 0.05
VGS(th), GATE THRESHOLD VOLTAGE (V)
1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 -50
-25
0
25
50
75 100 125 150
ID = 1 0A
0.04
VGS = 2 .5V
I D = 1mA
0.03
VGS = 10V ID = 5.8A
ID = 2 50μA
0.02
VGS = 4. 5V ID = 5.0 A
0.01
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (?C)
Figure 7 On-Resistance Variation with Temperature 20
TA = 150°C
TJ, JUNCTION TEMPERATURE (?C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000
f = 1M Hz
IS, SOURCE CURRENT (A) 16
TA = 125°C CT, JUNCTION CAPACITANCE (p F) 1000
12
Ciss
TA = 85°C
8
100
Crs
s
Coss
4
C TA = -55°
0
0
0.3
0.6
0.9
T C A = 25°1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
100
10 0
5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance
30
VD S = 15V ID = 6.9A
RDS(on) Limited
VGS GATE THRESHOLD VOLTAGE (V) 8
ID, DRAIN CURRENT (A) 10
6
DC 1 PW = 10s PW = 1s PW = 100ms TA = 25 °C VGS = 10 V Single Pulse 4
0.1 2 TJ(max)= 150 °C PW = 10ms PW = 1ms 0 0 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
14
PW = 100μs 0.01 DUT on 1 * MRP Board 0.1 1 10 100
VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area
DMN3042L
Document number: DS37539 Rev. 2- 2
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1
r(t), TRANSIENT THERMALRESISTANCE D = 0.9
D = 0.7 D = 0.5 D = 0.3
0.1 0.001 D = 0.1
D = 0.05
H Al 7° GAU0E.2 P5LANE J L aL1 K1 K A M F G D = 0.02 D = 0.01
0.01
D = 0.005
Rthja(t) = r(t) * Rthja Rthja = 168°C/W
Duty Cycle, D = t1/ t2 10 100 1000
D = Single Pulse
0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance
SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm Package Outline Dimensions
DMN3042L
Document number: DS37539 Rev. 2- 2
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AO3400A替代型号DMN3042L
