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LP2305

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LESHAN RADIO COMPANY, LTD.

30V P-Channel Enhancement-Mode MOSFET

VDS= -30V

RDS(ON), Vgs@-10V, Ids@-4.2A = 70m?RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85 m ?RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130m?

LP2305LT1G

3

1

2

SOT– 23 (TO–236AB)

FEATURESAdvanced trench process technology

High Density Cell Design For Ultra Low On-ResistanceORDERING INFORMATIONDDevice

LP2305LT1GLP2305LT3G

Marking

P05 P05

Shipping

3000/Tape&Reel10000/Tape&Reel

GSMAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25C unless otherwise noted)

o

Parameter

Drain-Source VoltageGate-Source VoltageContinuous Drain CurrentPulsed Drain Current

1)

Symbol

VDSVGSIDIDMTJ, Tstg

PDRθJA

Limit

-30±12-4.2-30-55 to 150

1.4

140

Unit

V

A

o

Operating Junction and Storage Temperature RangeTotal Power Dissipation

Junction-to-Ambient Thermal Resistance (PCB mounted) 2)

Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature

2. 1-in 2oz Cu PCB board

C

W

o

C/W

1/4

LESHAN RADIO COMPANY, LTD.

ELECTRICAL CHARACTERISTICSParameterStatic 2)

Drain-Source Breakdown VoltageDrain-Source On-State ResistanceDrain-Source On-State ResistanceDrain-Source On-State ResistanceGate Threshold VoltageZero Gate Voltage Drain CurrentGate Body LeakageForward Transconductance

BVDSSRDS(on)RDS(on)RDS(on)VGS(th)IDSSIGSSgfs

VGS = 0V, ID = -250uAVGS = -10V, ID = -4.2AVGS = -4.5V, ID = -4AVGS = -2.5V, ID =-1AVDS =VGS, ID = -250uAVDS = -24V, VGS = 0VVGS = ± 12V, VDS = 0VVDS = -5V, ID = -5A

7

11

-0.7-30

53.064.086.0

70.085.0130.0-1.3-1 ± 100

VuAnASmΩV

SymbolTest ConditionMinTypMaxUnit

Dynamic3)

Total Gate ChargeGate-Source ChargeGate-Drain ChargeTurn-On Delay TimeTurn-On Rise TimeTurn-Off Delay TimeTurn-Off Fall TimeInput CapacitanceOutput Capacitance

Reverse Transfer Capacitance

QgQgsQgdtd(on)trtd(off)tfCissCossCrss

VDS = -15V, VGS = 0Vf = 1.0 MHz

VDD = -15V, RL= 3.6?ID = -1A, VGEN = -10V RG = 6Ω

6.36

VDS = -15V, ID = -4AVGS = -4.5V

1.791.4211.362.3234.883.52826.1890.7453.18

pFnsnC

Source-Drain Diode

Max. Diode Forward CurrentDiode Forward Voltage

Note:1. Pulse test: pulse width <= 300us, duty cycle<= 2%

2. Static parameters are based on package level with recommended wire-bonding3. Guaranteed by design; not subject to production testing

ISVSD

IS = -1.0A, VGS = 0V

-2.2-1

AV

2/4

LESHAN RADIO COMPANY, LTD.

LP2305LT1G

TYPICAL ELECTRICAL CHARACTERISTICS

3/4

LESHAN RADIO COMPANY, LTD.

LP2305LT1G

SOT-23

NOTES:

AL31V

G2BS1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M,1982

2. CONTROLLING DIMENSION: INCH.DIMABCDGHJKLSV

INCHESMINMAX0.11020.11970.04720.05510.03500.04400.01500.02000.07010.08070.00050.00400.00340.00700.01400.02850.03500.04010.08300.10390.01770.0236

MILLIMETERS

MINMAX2.803.041.201.400.891.110.370.501.782.040.0130.1000.0850.1770.350.690.891.022.102.640.450.60

CDHKJ0.0370.950.0370.950.0792.00.0350.90.0310.8inchesmm4/4

LP2305

LESHANRADIOCOMPANY,LTD.30VP-ChannelEnhancement-ModeMOSFETVDS=-30VRDS(ON),Vgs@-10V,Ids@-4.2A=70m?RDS(ON),Vgs@-4.5V,Ids@-4.0A=85m?R
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