Philips Semiconductors
PMV40UN
TrenchMOS? ultra low level FET
1VGS(th)(V)0.8typ0.6min0.403aj6510-3ID(A)10-4mintyp03aj6410-50.20-60060120Tj (°C)18010-600.20.40.60.81VGS (V)ID=1mA; VDS=VGSTj=25°C; VDS=5VFig 9.Gate-source threshold voltage as a function ofjunction temperature.Fig 10.Sub-threshold drain current as a function ofgate-source voltage.104C(pF)10303an59Ciss102CossCrss 1010-1 1 10VDS (V) 102VGS=0V; f=1MHzFig 11.Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.9397 750 11668? Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product dataRev. 01 — 05 August 20037 of 12
Philips Semiconductors
PMV40UN
TrenchMOS? ultra low level FET
7.Package outline
Plastic surface mounted package; 3 leads
SOT23
DBEAXHEvMA3QAA11e1ebp2wMBdetail XLpc01scale2 mmDIMENSIONS (mm are the original dimensions)UNITmmA1.10.9A1max.0.1bp0.480.38c0.150.09D3.02.8E 1.41.2e1.9e10.95HE2.52.1Lp0.450.15Q0.550.45v0.2w0.1OUTLINEVERSION SOT23 REFERENCES IEC JEDECTO-236AB EIAJEUROPEANPROJECTIONISSUE DATE97-02-2899-09-13Fig 14.SOT23.
9397 750 11668
? Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product dataRev. 01 — 05 August 20039 of 12
MEMORY存储芯片PTVS48VS1UR,115中文规格书
