Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

Significant photoelectrical response of epitaxial

graphene grown on Si-terminated 6H-SiC

Hao Xin;Chen Yuan-Fu;Wang Ze-Gao;Liu Jing-Bo;He Jia-Rui;Li Yan-Rong

【期刊名称】《中国物理：英文版》 【年(卷),期】2013(022)007

【摘要】Photoelectrical response characteristics of epitaxial graphene (EG) films on Si-and C-terminated 6H-SiC,and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated.The results show that upon illumination by a xenon lamp,the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6％,while the photocurrents of EG grown on C-terminated SiC,and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5％ and 2.7％,respectively.The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG.Its strong photoelectrical response makes it promising for optoelectronic applications. 【总页数】4页(37-40) 【关键词】

【作者】Hao Xin;Chen Yuan-Fu;Wang Ze-Gao;Liu Jing-Bo;He Jia-Rui;Li Yan-Rong

【作者单位】State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of