Capping CsPbBr3 with ZnO to improve performance and stability of perovskite memristors

Capping CsPbBr3 with ZnO to improve performance and stability of perovskite

memristors

Ye Wu;Yi Wei;Yong Huang;Fei Cao;Dejian Yu;Xiaoming Li;Haibo Zeng

【期刊名称】《纳米研究（英文版）》 【年(卷),期】2017(010)005

【摘要】The rapid development of information technology has led to an urgent need for devices with fast information storage and processing,a high density,and low energy consumption.Memristors are considered to be next-generation memory devices with all of the aforementioned advantages.Recently,organometallic halide perovskites were reported to be promising active materials for memristors,although they have poor stability and mediocre performance.Herein,we report for the first time the fabrication of stable and high-performance memristors based on inorganic halide perovskite (CsPbBr3,CPB).The devices have electric field-induced bipolar resistive switching (ReS) and memory behaviors with a large on/off ratio (＞105),low working voltage (＜1 V) and energy consumption,long data retention (＞104 s),and high environmental stability,which are achieved via ZnO capping within the devices.Such a design

can

be

adapted

to

various

devices.Additionally,the

heterojunction between the CPB and ZnO endows the devices with a light-induced ReS effect of more than 103 with a rapid response speed