STP80N03L-06
N - CHANNEL ENHANCEMENT MODE
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TENTATIVE DATA
TYPESTP80N03L-06ssssssss
VDSS30 VRDS(on)< 0.006 ?ID80 A (*)TYPICAL RDS(on) = 0.005 ?
AVALANCHE RUGGED TECHNOLOGY100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY
175oC OPERATING TEMPERATUREHIGH dV/dt RUGGEDNESSAPPLICATION ORIENTEDCHARACTERIZATION
123TO-220APPLICATIONS sHIGH CURRENT, HIGH SPEED SWITCHINGsPOWER MOTOR CONTROLsDC-DC & DC-AC CONVERTERSsSYNCRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
SymbolVDSVDGRVGSIDIDIDM(?)PtotdV/dt(1)TstgTjParameterDrain-source Voltage (VGS = 0)Drain- gate Voltage (RGS = 20 k?)Gate-source VoltageDrain Current (continuous) at Tc = 25 oCDrain Current (continuous) at Tc = 100 oCDrain Current (pulsed)Total Dissipation at Tc = 25 oCDerating FactorPeak Diode Recovery voltage slopeStorage TemperatureMax. Operating Junction TemperatureValue3030± 15806032015015-65 to 175175UnitVVVAAAWW/oCV/nsooCC1/5
(?) Pulse width limited by safe operating area March 1996
STP80N03L-06
THERMAL DATA
Rthj-caseRthj-ambRthc-sinkTlThermal Resistance Junction-case MaxThermal Resistance Junction-ambient MaxThermal Resistance Case-sink TypMaximum Lead Temperature For Soldering Purpose 162.50.5300ooC/WC/WoC/WoCAVALANCHE CHARACTERISTICS
SymbolIAREASEARIARParameterAvalanche Current, Repetitive or Not-Repetitive(pulse width limited by Tj max, δ < 1%)Single Pulse Avalanche Energy(starting Tj = 25 oC, ID = IAR, VDD = 25 V)Repetitive Avalanche Energy(pulse width limited by Tj max, δ < 1%)Avalanche Current, Repetitive or Not-Repetitive(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)Max Value6060015060UnitAmJmJAELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)OFF
SymbolV(BR)DSSIDSSIGSSParameterDrain-sourceBreakdown VoltageTest ConditionsID = 250 μA VGS = 0Min.302501000± 100Typ.Max.UnitVμAμAnAZero Gate VoltageVDS = Max RatingDrain Current (VGS = 0)VDS = Max Rating x 0.8 Tc = 125 oCGate-body LeakageCurrent (VDS = 0)VGS = ± 15 VON (?)
SymbolVGS(th)RDS(on)ParameterStatic Drain-source OnResistanceTest ConditionsVGS = 10V ID = 40 AVGS = 10V ID = 40 A Tc = 100oCVGS = 5V ID = 40 AVGS = 5V ID = 40 A Tc = 100oC80Min.10.0050.006Typ.Max.2.50.0060.0120.0090.018UnitV????AGate Threshold VoltageVDS = VGS ID = 250 μAID(on)On State Drain CurrentVDS > ID(on) x RDS(on)max VGS = 10 V DYNAMIC
Symbolgfs (?)CissCossCrssParameterForwardTransconductanceInput CapacitanceOutput CapacitanceReverse TransferCapacitanceTest ConditionsVDS > ID(on) x RDS(on)max ID = 10 AVDS = 25 V f = 1 MHz VGS = 0Min.Typ.3560001000250Max.UnitSpFpFpF2/5
STP80N03L-06
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
Symboltd(on)tr(di/dt)onParameterTurn-on TimeRise TimeTurn-on Current SlopeTest ConditionsVDD = V ID = ARG = ? VGS = V(see test circuit, figure 3)VDD = V ID = ARG = ? VGS = V(see test circuit, figure 5)VDD = V ID = A VGS = VMin.Typ.Max.UnitnsnsA/μsQgQgsQgdTotal Gate ChargeGate-Source ChargeGate-Drain ChargenCnCnCSWITCHING OFF
Symboltr(Voff)tftcParameterOff-voltage Rise TimeFall TimeCross-over TimeTest ConditionsVDD = V ID = ARG = ? VGS = V(see test circuit, figure 5)Min.Typ.Max.UnitnsnsnsSOURCE DRAIN DIODE
SymbolISDISDM(?)VSD (?)trrQrrIRRMParameterSource-drain CurrentSource-drain Current(pulsed)Forward On VoltageReverse RecoveryTimeReverse RecoveryChargeReverse RecoveryCurrentISD = A VGS = 0ISD = A di/dt = A/μsVDD = V Tj = oC(see test circuit, figure 5)Test ConditionsMin.Typ.Max.803201.5UnitAAVnsμCA(?) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %(?) Pulse width limited by safe operating area
(1) ISD ≤ 60 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
3/5
STP80N03L-06
TO-220 MECHANICAL DATADIM.ACDD1EFF1F2GG1H2L2L4L5L6L7L9DIA.mmMIN.4.401.232.400.490.611.141.144.952.410.013.02.6515.256.23.53.75TYP.MAX.MIN.0.1730.0480.0940.0190.0240.0440.0440.1940.0940.3930.5110.1040.6000.2440.1370.147 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.7 10.40 14.0 2.95 15.75 6.6 3.93 3.85inchTYP.MAX. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.551 0.116 0.620 0.260 0.154 0.151 1.27 0.050 16.4 0.645ACD1L2F1DG1EDia.L5L7L6L4P011CL94/5
F2FGH2STP80N03L-06
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for theconsequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Nolicense is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentionedin this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without expresswritten approval of SGS-THOMSON Microelectonics.? 1995 SGS-THOMSON Microelectronics - All Rights ReservedSGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . .5/5
TO220-STP80N03
