Features特征
High Voltage : BVDSS=650V(Min.) Low Crss : Crss=16pF(Typ.)
Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85 (Max.)
PIN Connection
TO-220F-3L
D
Ordering Information订购信息
Type No.
G
Marking
Package Code
SMK0965F
SMK0965 SMK0965
G
D S
S
SMK0965F (HF)
TO-220F-3L
* SMK0965F : Pb Free Product
* SMK0965F (HF) : Halogen Free Product
Marking Diagram
Column 1 : Manufacturer
Column 2 : Production Information
e.g.) GFYMDD
-. G : Option Code (H : Halogen Free) -. F : Factory Management Code
-. YMDD : Date Code (Year, Month, Date)
Column 3 : Device Code
Absolute maximum ratings (TC=25 C unless otherwise noted)绝对最大额定值 Characteristic Symbol Rating VDSS Drain-source voltage 650 Gate-source voltage VGSS 30 TC=25 C 9 Unit V V Drain current (DC) * A A A W A ID TC=100 C IDM PD IAS 5.5 36 40 9 250 Drain current (Pulsed) * Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range EAS mJ A IAR 9 11.6 EAR mJ C TJ Tstg 150 -55~150 * Limited by maximum junction temperature Characteristic Thermal resistance Symbol Rth(J-C) Rth(J-A) Typ. - - Max. 3.1 62.5 Unit C/W Junction-case Junction-ambient
Electrical Characteristics (TC=25 C unless otherwise noted)电气特性 Characteristic Symbol Test Condition Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Min. Typ. 650 2.0 - - - - - Max. Unit - 4.0 1 100 0.85 - 2550 BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss ID=250uA, VGS=0V ID=250uA, VDS=VGS VDS=650V, VGS=0V VDS=0V, VGS= 30V VGS=10V, ID=4.5A VDS=10V, ID=4.5A VGS=0V, VDS=25V f=1 MHz - - - - 0.72 11 2040 153 V V uA nA S Output capacitance - 192 pF Reverse transfer capacitance Crss td(on) - 16 20 - Turn-on delay time VDD=300V, ID=9A RG=25 - 23 69 144 Rise time Turn-off delay time tr td(off) tf Qg - - - - - - - - ns Fall time Total gate charge VDS=520V, VGS=10V ID=9A 77 35 - - - 57 Gate-source charge Gate-drain charge Qgs Qgd 10 9 nC
Source-Drain Diode Ratings and Characteristics (TC=25 C unless otherwise noted)
Characteristic Symbol Test Condition Min. Typ. Max. Source current (DC) Source current (Pulsed) Unit A IS ISM Integral reverse diode in the MOSFET - - - - 9 36 1.4 - - Forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IS=9A IS=9A, VGS=0V dIF/dt=100A/us - - - - 420 4.2 V ns uC
Note ;
Repetitive rating : Pulse width limited by maximum junction
temperature L=5.7mH, IAS=9A, VDD=50V, RG=25 , Starting TJ=25 C Pulse Test : Pulse width 300us, Duty cycle 2% Essentially independent of operating temperature
重复额定值：脉冲宽度受最大结温L = 5.7mH，IAS = 9A，VDD = 50V，RG = 25，开始TJ = 25 C限制 脉冲测试：脉冲宽度300us，占空比2％基本上与工作温度无关
Electrical Characteristic Curves电气特性曲线
Fig. 1 ID - VDS
Fig. 3 RDS(on) - ID
Fig. 5 Capacitance - VDS
Fig. 2 ID - VGS
Fig. 4 I S - VSD
Fig.6 V GS - QG
Electrical Characteristic Curves
Fig. 7 VDSS - TJ
Fig. 9 ID - TC
Fig.8 R DS(on) - TJ
Fig. 10 Safe Operating Area
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
SMK0965F 9N65 AUK高压MOS管 - 图文
