SEMICONDUCTOR MEMORY CELL
申请(专利)号： JP19970138231
专利号： JPH10335489A 主分类号： H01L21/8244
申请权利人： NKK CORP 公开国代码： JP 优先权国家： JP
摘 要：
PROBLEM TO BE SOLVED: To provide a semiconductor memory cell where the memory cell can be further miniaturized and power consumption can be
reduced. ;SOLUTION: Pull-up elements 13 and 14 using a tunnel current due to PN junction are connected to a memory part consisting of P-channel and N-channel transistors 11 and 12 that are in a flip-flop structure, the occurrence of latchup is reduced, and the influence of fluctuation in characteristics can be reduced due to the scattering of
resistance caused by the nonuniformity of a process on manufacturing as compared with a fine and high-resistance memory cell since a tunneling current is used regardless of miniaturization. A
semiconductor substrate or a well region can be used for a current passage and wiring can be reduced and a cell area can be reduced in a semiconductor memory cell.;COPYRIGHT: (C)1998,JPO 主权项：
申请日： 1997-05-28 公开公告日： 1998-12-18
分类号： H01L21/8244;
H01L27/11; H01L29/78 发明设计人： GOTO HIROSHI 申请国代码： JP
优先权： 19970528 JP
13823197
摘 要 附 图：
【請求項1】 半導体基板上に形成されるフリップフロップ構成されたトランジスタからなるメモリ部に接続されるプルアップ素子を有する半導体メモリセルにおいて、 前記プルアップ素子は、前記半導体基板上のウェ
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SEMICONDUCTOR MEMORY CELL
