SEMICONDUCTOR DEVICE AND MANUFACTURE
THEREOF
申请(专利)号： JP19960177233
专利号： JPH1012733A 主分类号： H01L21/768 申请权利人： SONY CORP 公开国代码： JP 优先权国家： JP
申请日： 1996-06-19 公开公告日： 1998-01-16
分类号： H01L21/768;
H01L21/76 发明设计人： TSUCHIYA
YOSHIKO 申请国代码： JP
优先权： 19960619 JP
17723396
摘 要 附 图：
摘 要：
PROBLEM TO BE SOLVED: To provide a semiconductor device and manufacture thereof which enable prevention of
lowering of integration degree and enable securing good element isolation property by a trench structure. ;SOLUTION: An etching stop film 18 having a high etching selection ratio is extensively provided on the entire upper peripheral portion of an isolation insulating film 17 in a trench 15, and the isolation insulating film 17 is protected from subsequent etching for forming a contact hole 24. Thus,
formation of an unnecessary groove due to grinding of the isolation insulation film 17 in the trench 15 may be securely prevented, and deterioration in element isolation property may be
prevented.;COPYRIGHT: (C)1998,JPO 主权项：
【請求項1】 各種の半導体素子が形成される半導体基板を複数領域に分離する分離溝と、
前記分離溝内に埋め込まれた分離絶縁膜と、
少なくとも前記分離溝と前記半導体基板との境界部に沿って前記分離絶縁膜を覆
权 利 要 求 说 明 书
【SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF】的权利说明书内容是......请下载后查看
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
